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Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET
Title Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET Translation Štatistická simulácia kolísania prahového napätia indukovaného náhodným dopantom pre MOSFET dĺžky kanála 35 nm Author info Urban Kováč, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov Author Kováč Urban EUBFNHKFI - Katedra financií FNH Co-authors Reid Dave Millar Campbell Roy Gareth Roy Scott Asenov Asen Source document Microelectronics and Reliability. Vol. 48, no. 8-9 (2008), pp. 1572-1575. - Oxford : Elsevier. ISSN 1872-941X Document kind schedule of articles from periodics Language English Country of Edition Great Britain Public work category Scientific titles in foreign carented magazines and noticed year-books Registered in WOS Database PUBLIKAČNÁ ČINNOSŤ No. of Archival Copy E08 01852-001, kópia plného textu
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