1. Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET
Title | Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET |
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Translation | Štatistická simulácia kolísania prahového napätia indukovaného náhodným dopantom pre MOSFET dĺžky kanála 35 nm |
Author info | Urban Kováč, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov |
Author | Kováč Urban EUBFNHKFI - Katedra financií FNH |
Co-authors | Reid Dave |
Millar Campbell | |
Roy Gareth | |
Roy Scott | |
Asenov Asen | |
Source document | Microelectronics and Reliability. Vol. 48, no. 8-9 (2008), pp. 1572-1575. - Oxford : Elsevier. ISSN 1872-941X |
Document kind | schedule of articles from periodics |
Language | English |
Country of Edition | Great Britain |
Public work category | Scientific titles in foreign carented magazines and noticed year-books |
Registered in | WOS |
Database | PUBLIKAČNÁ ČINNOSŤ |
No. of Archival Copy | E08 01852-001, kópia plného textu |