Vytlačiť
1. Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET
| SYS | 0127809 | |
|---|---|---|
| LBL | $$$$$nla$$22$$$$$$$$450$ | |
| 005 | 20240502083321.6 | |
| 014 | $a 000260347000094 $2 WOS | |
| 014 | $a 000260347000094 $2 CCC | |
| 100 | $a 20110406a2008łłłłm$$y0sloc0103$$$$ba | |
| 101 | 0- | $a eng $d eng |
| 102 | $a GB | |
| 200 | 1- | $a Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET $f Urban Kováč, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov |
| 463 | -1 | $1 001 eu_un_cat*0270009 $1 011 $a 1872-941X $1 011 $a 0026-2714 $1 200 1 $a Microelectronics and Reliability $v Vol. 48, no. 8-9 (2008), pp. 1572-1575 $1 210 $a Oxford $c Elsevier |
| 541 | 1- | $a Štatistická simulácia kolísania prahového napätia indukovaného náhodným dopantom pre MOSFET dĺžky kanála 35 nm |
| 675 | $v 1. stred. $z slo | |
| 700 | -1 | $3 eu_un_auth*p0056135 $a Kováč $b Urban $p EUBFNHKFI $9 99 $4 070 $T Katedra financií FNH |
| 701 | -1 | $3 eu_un_auth*0037783 $a Reid $b Dave $4 070 $9 0,96 |
| 701 | -1 | $3 eu_un_auth*0037784 $a Millar $b Campbell $4 070 $9 0,01 |
| 701 | -1 | $3 eu_un_auth*0037768 $a Roy $b Gareth $4 070 $9 0,01 |
| 701 | -1 | $3 eu_un_auth*0037775 $a Roy $b Scott $4 070 $9 0,01 |
| 701 | -1 | $3 eu_un_auth*0037769 $a Asenov $b Asen $4 070 $9 0,01 |
| 801 | -0 | $a SK $b BA004 $c 20110406 $g AACR2 |