Vytlačiť
1. Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET
:KOVÁČ, Urban et al. Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET. In Microelectronics and Reliability. - Oxford : Elsevier. ISSN 1872-941X, 2008, vol. 48, no. 8-9, pp. 1572-1575.