Výsledky vyhľadávania

Nájdených záznamov: 12  
Vaša otázka: Autor-kód záznamu = "^eu_un_auth 0037769^"

  1. 1.The compact modelling strategy on SNM and read current variability in modern SRAM

    ASENOV, P. et al. The compact modelling strategy on SNM and read current variability in modern SRAM. In Simulation of Semiconductor Processes and Devices (SISPAD) 2011 : international conference, September 8-10, 2011, Osaka, Japan. - [Japan] : IEEE, 2011. ISBN 978-1-61284-419-0. ISSN 1946-1569, s. 283-286. Dostupné na : <http://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=6035024>
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  2. 2.A general approach for multivariate statistical MOSFET compact modeling preserving correlations

    LANGE, André et al. A general approach for multivariate statistical MOSFET compact modeling preserving correlations. In Solid-state device research conference (ESSDERC) : proceedings of the European, 12-16 September 2011. - [s.l. s.n.], 2011. ISBN 978-1-4577-0706-3. ISSN 1930-8876, s. 163-166. Dostupné na : <http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6044209&tag=1>
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  3. 3.Use of Density Gradient Quantum Corrections in the Simulation of Statistical Variability in MOSFETs

    BROWN, Adrew R. et al. Use of Density Gradient Quantum Corrections in the Simulation of Statistical Variability in MOSFETs. - Registrovaný: SCOPUS, Registrovaný: Web of Science. In Journal of computational electronics. - [USA] : SpringerLink, 2010. ISSN 1572-8137, december 2010, vol. 9, no. 3-4, s. 187-196. Dostupné na : <http://www.springerlink.com/content/w416x1185g525672/fulltext.pdf>
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  4. 4.A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method

    KOVÁČ, Urban et al. A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method. In SISPAD 2010 : 15th International conference on simulation of semiconductor processes and devices, september 6-8, 2010, Bologna, Italy. - USA : IEEE, 2010. ISBN 978-1-4244-7699-2, s. 125-128. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5604552>
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  5. 5.Hierarchical Simulation of Statistical Variability

    KOVÁČ, Urban et al. Hierarchical Simulation of Statistical Variability : From 3-D MC with "Ab Initio” Ionized Impurity Scattering to Statistical Compact Models. In IEEE Transactions on Electron Devices. - New York : IEEE Electron Devices Society. ISSN 1557-9646, 2010, vol. 57, no. 10, s. 2418-2426. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5551189>
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  6. 6.Statistical estimation of electrostatic and transport contributions to device parameter variation

    KOVÁČ, Urban - ALEXANDER, Craig - ASENOV, Asen. Statistical estimation of electrostatic and transport contributions to device parameter variation. In IWCE 2010 : 14th international workshop on computational electronics. - [s.l.] : IEEE, 2010. ISBN 978-1-4244-9383-8, s. [1-4]. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5677971>
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  7. 7.Compact model extraction from quantum corrected statistical Monte Carlo simulation of random dopant induced drain current variability

    KOVÁČ, Urban et al. Compact model extraction from quantum corrected statistical Monte Carlo simulation of random dopant induced drain current variability. In ASDAM 2010 : 8th international conference on Advanced Semiconductor Devices & Microsystems : conference proceedings, Smolenice Castle, Slovakia 25-27 October 2010. - Bratislava : Microelectronics department Faculty of electrical engineering and information technology Slovak university of technology in Bratislava, 2010. ISBN 978-1-4244-8574-1, s. 317-320. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5666361>
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  8. 8.Modeling and simulation of transistor and circuit variability and reliability

    ASENOV, Asen et al. Modeling and simulation of transistor and circuit variability and reliability. In Custom Integrated Circuits Conference (CICC) : 32nd annual CICC. - New York : IEEE, 2010. ISBN 978-1-4244-5760-1, s. [1-8]. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=05617627>
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  9. 9.Simulation of Statistical Variability in Nano-CMOS Transistors Using Drift-diffusion, Monte Carlo and Non-equilibrium Green's Function Techniques

    ASENOV, Asen et al. Simulation of Statistical Variability in Nano-CMOS Transistors Using Drift-diffusion, Monte Carlo and Non-equilibrium Green's Function Techniques. In Journal of computational electronics. - [USA] : SpringerLink, 2009. ISSN 1572-8137, october 2009, vol. 8, no. 3-4, s. 349-3723. Dostupné na : <http://www.springerlink.com/content/16664q8604ng7qqu>
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  10. 10.A unified density gradient approach to ‘ab-initio’ ionised impurity scattering in 3D MC simulations of nano-CMOS variability

    CRAIG, Alexander et al. A unified density gradient approach to ‘ab-initio’ ionised impurity scattering in 3D MC simulations of nano-CMOS variability. In ULIS 2009 : 10th International conference on ULtimate Integration of Silicon, Aachen, 18-20 march, 2009. - USA : IEEE, 2009. ISBN 978-1-4244-3705-4, s. 43-46. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4897535>
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