Výsledky vyhľadávania
- ASENOV, P. et al. The compact modelling strategy on SNM and read current variability in modern SRAM. In Simulation of Semiconductor Processes and Devices (SISPAD) 2011 : international conference, September 8-10, 2011, Osaka, Japan. - [Japan] : IEEE, 2011. ISBN 978-1-61284-419-0. ISSN 1946-1569, s. 283-286. Dostupné na : <http://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=6035024>
článok
- ASENOV, Asen et al. Modeling and simulation of transistor and circuit variability and reliability. In Custom Integrated Circuits Conference (CICC) : 32nd annual CICC. - New York : IEEE, 2010. ISBN 978-1-4244-5760-1, s. [1-8]. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=05617627>
článok
- KOVÁČ, Urban et al. Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET. In Microelectronics and Reliability. - Oxford : Elsevier. ISSN 1872-941X, 2008, vol. 48, no. 8-9, pp. 1572-1575.
článok
- ASENOV, Asen et al. Advanced simulation of statistical variability and reliability in nano CMOS transistors. In IEEE International electron devices meeting 2008 : San Francisco, CA, December 15-17, 2008. - New York : IEEE, 2008. ISBN 978-1-4244-2377-4. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4796712&tag=1>
článok