Výsledky vyhľadávania
- KOVÁČ, Urban et al. Compact model extraction from quantum corrected statistical Monte Carlo simulation of random dopant induced drain current variability. In ASDAM 2010 : 8th international conference on Advanced Semiconductor Devices & Microsystems : conference proceedings, Smolenice Castle, Slovakia 25-27 October 2010. - Bratislava : Microelectronics department Faculty of electrical engineering and information technology Slovak university of technology in Bratislava, 2010. ISBN 978-1-4244-8574-1, s. 317-320. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5666361>
článok
- KOVÁČ, Urban et al. Hierarchical Simulation of Statistical Variability : From 3-D MC with "Ab Initio” Ionized Impurity Scattering to Statistical Compact Models. In IEEE Transactions on Electron Devices. - New York : IEEE Electron Devices Society. ISSN 1557-9646, 2010, vol. 57, no. 10, s. 2418-2426. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5551189>
článok
- KOVÁČ, Urban - ALEXANDER, Craig - ASENOV, Asen. Statistical estimation of electrostatic and transport contributions to device parameter variation. In IWCE 2010 : 14th international workshop on computational electronics. - [s.l.] : IEEE, 2010. ISBN 978-1-4244-9383-8, s. [1-4]. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5677971>
článok
- ASENOV, Asen et al. Advanced simulation of statistical variability and reliability in nano CMOS transistors. In IEEE International electron devices meeting 2008 : San Francisco, CA, December 15-17, 2008. - New York : IEEE, 2008. ISBN 978-1-4244-2377-4. Dostupné na : <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4796712&tag=1>
článok